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CEB30P03 fiches techniques PDF

CET - P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CEB30P03
Description P-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





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CEB30P03 fiche technique
CEP30P03/CEB30P03
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -30A, RDS(ON) =32m@VGS = -10V.
RDS(ON) =50m@VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
VDS
VGS
ID
IDM
-30
±20
-30
-21
-120
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
50
0.33
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
3
62.5
Units
V
V
A
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2011.Feb
http://www.cet-mos.com

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