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PDF 7NM60 Data sheet ( Hoja de datos )
| Número de pieza | 7NM60 | |
| Descripción | 600V N-CHANNEL POWER MOSFET | |
| Fabricantes | UNISONIC TECHNOLOGIES | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 7NM60 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
7NM60
Preliminary
7.4A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7NM60 is a high voltage super junction MOSFET and
is designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in switching power
supplies and adaptors.
FEATURES
* RDS(ON) < 0.9Ω @ VGS = 10V, ID = 3.7A
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7NM60L-TF1-T
7NM60G-TF1-T
7NM60L-TN3-R
7NM60G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-252
Pin Assignment
123
GDS
GDS
Packing
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UNISONIC TECHNOLOGIES CO., LTD
7NM60
Preliminary
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 7NM60.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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