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Renesas - MOS FIELD EFFECT TRANSISTOR

Numéro de référence NP160N04TUJ
Description MOS FIELD EFFECT TRANSISTOR
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NP160N04TUJ fiche technique
NP160N04TUJ
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0021EJ0100
Rev.1.00
Jul 01, 2010
Description
The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance
RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP160N04TUJ -E1-AY 1
NP160N04TUJ -E2-AY 1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 pcs/reel
Note: 1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-263-7pin, Taping (E1 type)
TO-263-7pin, Taping (E2 type)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V) VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C) PT1
Total Power Dissipation (TA = 25°C) PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current 2
Repetitive Avalanche Energy 2
Tstg
IAR
EAR
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Tch(peak) 150°C, RG = 25 Ω
Ratings
40
±20
±160
±640
250
1.8
175
55 to +175
60
360
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.60
83.3
°C/W
°C/W
R07DS0021EJ0100 Rev.1.00
Jul 01, 2010
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