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Numéro de référence | NP160N04TUJ | ||
Description | MOS FIELD EFFECT TRANSISTOR | ||
Fabricant | Renesas | ||
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1 Page
NP160N04TUJ
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0021EJ0100
Rev.1.00
Jul 01, 2010
Description
The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance
⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
• Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V)
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP160N04TUJ -E1-AY ∗1
NP160N04TUJ -E2-AY ∗1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 pcs/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-263-7pin, Taping (E1 type)
TO-263-7pin, Taping (E2 type)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V) VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C) PT1
Total Power Dissipation (TA = 25°C) PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current ∗2
Repetitive Avalanche Energy ∗2
Tstg
IAR
EAR
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Tch(peak) ≤ 150°C, RG = 25 Ω
Ratings
40
±20
±160
±640
250
1.8
175
−55 to +175
60
360
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.60
83.3
°C/W
°C/W
R07DS0021EJ0100 Rev.1.00
Jul 01, 2010
Page 1 of 6
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Pages | Pages 8 | ||
Télécharger | [ NP160N04TUJ ] |
No | Description détaillée | Fabricant |
NP160N04TUG | SWITCHING N-CHANNEL POWER MOS FET | NEC |
NP160N04TUJ | MOS FIELD EFFECT TRANSISTOR | Renesas |
NP160N04TUK | MOS FIELD EFFECT TRANSISTOR | Renesas |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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