DataSheetWiki


C30902SH fiches techniques PDF

PerkinElmer Optoelectronics - Silicon Avalanche Photodiodes

Numéro de référence C30902SH
Description Silicon Avalanche Photodiodes
Fabricant PerkinElmer Optoelectronics 
Logo PerkinElmer Optoelectronics 





1 Page

No Preview Available !





C30902SH fiche technique
Silicon Avalanche Photodiodes
C30902 Series
High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications
Overview
PerkinElmer’s C30902EH avalanche
photodiode is fabricated with a double-
diffused “reach-through” structure. This
structure provides high responsivity
between 400 and 1000 nm as well as
extremely fast rise and fall times at all
wavelengths. The responsivity of the
device is independent of modulation
frequency up to about 800 MHz. The
detector chip is hermetically-sealed
behind a flat glass window in a modified
TO-18 package. The useful diameter of
the photosensitive surface is 0.5 mm.
PerkinElmer’s C30921EH is packaged in
a lightpipe TO-18 which allows efficient
coupling of light to the detector from
either a focused spot or an optical fiber
up to 0.25 mm in diameter.
The hermetically-sealed TO-18 package
allows fibers to be epoxied to the end of
the lightpipe to minimize signal losses
without fear of endangering detector
stability.
The C30902SH and C30921SH are
selected C30902EH and C30921EH
photodiodes having extremely low noise
and bulk dark-current. They are intended
for ultra-low light level applications
(optical power less than 1 pW) and can
be used in either their normal linear mode
(VR<VBR) at gains up to 250 or greater, or
as photon counters in the “Geiger” mode
(VR > VBR) where a single photoelectron
may trigger an avalanche pulse of about
108 carriers. In this mode, no amplifiers
are necessary and single-photon
detection probabilities of up to
approximately 50% are possible.
Photon-counting is also advantageous
where gating and coincidence techniques
are employed for signal retrieval.
Features and Benefits
High quantum efficiency of
77% typical @ 830 nm
C30902SH and C30921SH
can be operated in “Geiger”
mode
Hermetically sealed package
Low Noise at room
temperature
High responsivity – internal
avalanche gains in excess of
150
Spectral response range –
(10% points) 400 to 1000 nm
Time response – typically 0.5
ns
Wide operating temperature
range - -40°C to +70°C
RoHS-compliant
Applications
LIDAR
Laser range finder
Small-signal fluorescence
Photon counting
www.optoelectronics.perkinelmer.com

PagesPages 13
Télécharger [ C30902SH ]


Fiche technique recommandé

No Description détaillée Fabricant
C30902S (C309xxx) Silicon Avalanche Photodiodes PerkinElmer Optoelectronics
PerkinElmer Optoelectronics
C30902S (C30xxx) PhotoDiode Perkin Elmer Optoelectronics
Perkin Elmer Optoelectronics
C30902S (C30xxx) PhotoDiode Perkin Elmer Optoelectronics
Perkin Elmer Optoelectronics
C30902SH Silicon Avalanche Photodiodes PerkinElmer Optoelectronics
PerkinElmer Optoelectronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche