|
|
Numéro de référence | TC58NVG2S0HTA00 | ||
Description | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM | ||
Fabricant | Toshiba | ||
Logo | |||
1 Page
TC58NVG2S0HTA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NVG2S0HTA00 is a single 3.3V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks.
The device has two 4352-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block
unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages).
The TC58NVG2S0HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
• Organization
Memory cell array
Register
Page size
Block size
x8
4352 × 128K × 8
4352 × 8
4352 bytes
(256K + 16K) bytes
• Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
• Mode control
Serial input/output
Command control
• Number of valid blocks
Min 2008 blocks
Max 2048 blocks
• Power supply
VCC = 2.7V to 3.6V
• Access time
Cell array to register 25 µs max
Serial Read Cycle
25 ns min (CL=50pF)
• Program/Erase time
Auto Page Program
Auto Block Erase
300 µs/page typ.
2.5 ms/block typ.
• Operating current
Read (25 ns cycle)
Program (avg.)
Erase (avg.)
Standby
30 mA max.
30 mA max
30 mA max
50 µA max
• Package
TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)
• 8 bit ECC for each 512Byte is required.
1 2013-07-05C
|
|||
Pages | Pages 30 | ||
Télécharger | [ TC58NVG2S0HTA00 ] |
No | Description détaillée | Fabricant |
TC58NVG2S0HTA00 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM | Toshiba |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |