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TH58BVG3S0HTAI0 fiches techniques PDF

Toshiba - 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

Numéro de référence TH58BVG3S0HTAI0
Description 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM
Fabricant Toshiba 
Logo Toshiba 





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TH58BVG3S0HTAI0 fiche technique
TH58BVG3S0HTAI0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58BVG3S0HTAI0 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.
The device has a 4224-byte static register which allows program and read data to be transferred between the
register and the memory cell array in 4224-bytes increments. The Erase operation is implemented in a single block
unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).
The TH58BVG3S0HTAI0 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
The TH58BVG3S0HTAI0 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected
internally.
FEATURES
Organization
x8
Memory cell array 4224 × 128K × 8 × 2
Register
4224 × 8
Page size
4224 bytes
Block size
(256K + 8K) bytes
Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read
Mode control
Serial input/output
Command control
Number of valid blocks
Min 4016 blocks
Max 4096 blocks
Power supply
VCC = 2.7V to 3.6V
Access time
Cell array to register 55 µs typ. (Single Page Read) / 90µs typ. (Multi Page Read)
Serial Read Cycle 25 ns min (CL=50pF)
Program/Erase time
Auto Page Program
Auto Block Erase
340 µs/page typ.
2.5 ms/block typ.
Operating current
Read (25 ns cycle)
Program (avg.)
Erase (avg.)
Standby
30 mA max.
30 mA max
30 mA max
100 µA max
Package
TSOP I 48-P-1220-0.50 (Weight: 0.54 g typ.)
8bit ECC for each 528Byte is implemented on the chip.
1 2013-09-20C

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