TH58NVG5S0FTAK0 Datasheet PDF - Toshiba Semiconductor
| Part Number | TH58NVG5S0FTAK0 | |
| Description | 32 GBIT (4G x 8 BIT) CMOS NAND E2PROM | |
| Manufacturers | Toshiba Semiconductor | |
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There is a preview and TH58NVG5S0FTAK0 download ( pdf file ) link at the bottom of this page. Total 30 Pages | ||
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TH58NVG5S0FTAK0
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
32 GBIT (4G × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58NVG5S0F is a single 3.3V 32 Gbit (36,305,895,424 bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 16384 blocks.
The device has two 4328-byte static registers which allow program and read data to be transferred between the
register and the memory cell array in 4328-byte increments. The Erase operation is implemented in a single block
unit (256 Kbytes + 14.5 Kbytes: 4328 bytes × 64 pages).
The TH58NVG5S0F is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
• Organization
x8
Memory cell array 4328 × 256K × 8 × 4
Register
4328 × 8
Page size
4328 bytes
Block size
(256K + 14.5K) bytes
• Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
• Mode control
Serial input/output
Command control
• Number of valid blocks
Min 16064 blocks
Max 16384 blocks
• Power supply
VCC = 2.7V to 3.6V
• Access time
Cell array to register 30 µs max
Serial Read Cycle 25 ns min (CL=100pF)
• Program/Erase time
Auto Page Program
Auto Block Erase
300 µs/page typ.
3 ms/block typ.
• Operating current
Read (25 ns cycle)
Program (avg.)
Erase (avg.)
Standby
30 mA max.
30 mA max
30 mA max
200 µA max
• Package
TSOP I 48-P-1220-0.50C
• 4bit ECC for each 512Byte is required.
1 2011-07-01C
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TH58NVG5S0FTAK0
VALID BLOCKS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NVB Number of Valid Blocks
16064
16384
Blocks
NOTE:
The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.
The first block (Block 0) is guaranteed to be a valid block at the time of shipment.
The specification for the minimum number of valid blocks is applicable over lifetime
The number of valid blocks is on the basis of single plane operations, and this may be decreased with two plane
operations.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
VCC
Power Supply Voltage
2.7 3.6 V
VIH High Level input Voltage 2.7 V ≤ VCC ≤ 3.6 V
Vcc x 0.8
VCC + 0.3
V
VIL Low Level Input Voltage 2.7 V ≤ VCC ≤ 3.6 V
−0.3*
Vcc x 0.2
* −2 V (pulse width lower than 20 ns)
DC CHARACTERISTICS (Ta = -40 to 85℃, VCC = 2.7 to 3.6V)
SYMBOL
PARAMETER
CONDITION
IIL
ILO
ICCO0 *1
ICCO1 *2
ICCO2 *2
ICCO3 *2
ICCS
Input Leakage Current
Output Leakage Current
Power On Reset Current
Serial Read Current
Programming Current
Erasing Current
Standby Current
VIN = 0 V to VCC
VOUT = 0 V to VCC
PSL = GND or NU
PSL = VCC, FFh command input after
Power On
CE = VIL, IOUT = 0 mA, tcycle = 25 ns
CE = VCC − 0.2 V, WP = 0 V/VCC,
PSL = 0 V/VCC/NU
MIN
TYP.
MAX
±10
±10
30
30
30
30
30
200
V
UNIT
µA
µA
mA
mA
mA
mA
µA
VOH
High Level Output Voltage IOH = −0.4 mA
2.4
V
VOL Low Level Output Voltage IOL = 2.1 mA
0.4 V
IOL
( RY / BY )
Output current of RY / BY
pin
VOL = 0.4 V
*1 Refer to application note (2) for detail
*2 Icco1/2/3 are the value of one chip, and an unselected chip is in Standby mode.
8
mA
5 2011-07-01C
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for TH58NVG5S0FTAK0 electronic component. |
| Information | Total 30 Pages | |
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