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PDF VS-80APF12PbF Data sheet ( Hoja de datos )
| Número de pieza | VS-80APF12PbF | |
| Descripción | Fast Soft Recovery Rectifier Diode | |
| Fabricantes | Vishay | |
| Logotipo |  |
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VS-80APF1.PbF Series, VS-80APF1.-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 80 A
3
2
1
TO-247AC
Base
cathode
+
2
1
Anode -
3
- Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
IFSM
trr
TJ max.
Diode variation
Snap factor
TO-247AC
80 A
1000 V, 1200 V
1.35 V
1250 A
90 ns
150 °C
Single die
0.5
FEATURES
• 150 °C max. operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified according to
JEDEC®-JESD47
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Available
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-80APF1... soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
TEST CONDITIONS
VRRM
IF(AV)
IFSM
trr
VF
TJ
Sinusoidal waveform
1 A, - 100 A/μs
40 A, TJ = 25 °C
VOLTAGE RATINGS
PART NUMBER
VS-80APF10PbF, VS-80APF10-M3
VS-80APF12PbF, VS-80APF12-M3
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
1000
1200
VALUES
1000/1200
80
1250
90
1.2
-40 to 150
UNITS
V
A
ns
V
°C
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1100
1300
IRRM
AT 150 °C
mA
15
Revision: 06-Feb-14
1 Document Number: 93725
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
VS-80APF1.PbF Series, VS-80APF1.-M3 Series
www.vishay.com
Vishay Semiconductors
45
40 TJ = 25 °C
35
IFM = 80 A
30
25 IFM = 40 A
20 IFM = 20 A
15
IFM = 10 A
10
5 IFM = 1 A
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
60
50 TJ = 150 °C
40
30
IFM = 80 A
IFM = 40 A
IFM = 20 A
20 IFM = 10 A
10
IFM = 1 A
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
0.1
0.01
0.001
0.0001
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady state value
(DC operation)
80EPF.. Series
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
1
10
Revision: 06-Feb-14
5 Document Number: 93725
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet VS-80APF12PbF.PDF ] | |
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