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Toshiba Semiconductor - NPN Transistor - 2SC6000

Numéro de référence C6000
Description NPN Transistor - 2SC6000
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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C6000 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6000
High Speed Switching Applications
DC-DC Converter Applications
2SC6000
Unit: mm
High DC current gain: hFE = 250 to 400 (IC = 2.5 A)
Low collector-emitter saturation: VCE (sat) = 0.18 V (max)
High speed switching: tf = 13 ns (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
120
120
50
6
7.0
10.0
0.5
20
150
55 to 150
V
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-13
Free Datasheet http://www.datasheet4u.com/

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