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Número de pieza | NVA4153N | |
Descripción | Small Signal MOSFET | |
Fabricantes | On Semiconductor | |
Logotipo | ||
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No Preview Available ! NTA4153N, NTE4153N,
NVA4153N, NVE4153N
Small Signal MOSFET
20 V, 915 mA, Single N−Channel
with ESD Protection, SC−75 and SC−89
Features
• Low RDS(on) Improving System Efficiency
• Low Threshold Voltage, 1.5 V Rated
• ESD Protected Gate
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• Pb−Free Packages are Available
Applications
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Management
• Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State
TA = 85°C
Steady State
VDSS
VGS
ID
PD
20 V
±6.0 V
915 mA
660
300 mW
Pulsed Drain Current
tp =10 ms
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
TL
1.3
−55 to
150
280
260
A
°C
mA
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Value Units
Junction−to−Ambient − Steady State (Note 1)
SC−75 / SOT−416
SC−89
RqJA
°C/W
416
400
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
V(BR)DSS
20 V
RDS(on) TYP
0.127 W @ 4.5 V
0.170 W @ 2.5 V
0.242 W @ 1.8 V
0.500 W @ 1.5 V
ID MAX
915 mA
3
N−Channel MOSFET
12
MARKING DIAGRAM &
PIN ASSIGNMENT
3
SC−75 / SOT−416
2
1
CASE 463
STYLE 5
3
Drain
XX MG
3G
SC−89
2 CASE 463C
1
2
1 Gate Source
XX = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
SC−75, SC−89
Gate 1
3 Drain
Source 2
Top View
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 7
1
Publication Order Number:
NTA4153N/D
1 page NTA4153N, NTE4153N, NVA4153N, NVE4153N
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
b 3 PL
0.20 (0.008) M D
−E−
2
3
1
e −D−
HE 0.20 (0.008) E
C
A
L A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN NOM MAX
A 0.70 0.80 0.90
A1 0.00 0.05 0.10
b 0.15 0.20 0.30
C 0.10 0.15 0.25
D 1.55 1.60 1.65
E 0.70 0.80 0.90
e 1.00 BSC
L 0.10 0.15 0.20
HE 1.50 1.60 1.70
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
INCHES
MIN NOM MAX
0.027 0.031 0.035
0.000 0.002 0.004
0.006 0.008 0.012
0.004 0.006 0.010
0.059 0.063 0.067
0.027 0.031 0.035
0.04 BSC
0.004 0.006 0.008
0.061 0.063 0.065
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
SCALE 10:1
ǒ mm Ǔ
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NVA4153N.PDF ] |
Número de pieza | Descripción | Fabricantes |
NVA4153N | Small Signal MOSFET | On Semiconductor |
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