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PDF K3268 Data sheet ( Hoja de datos )
| Número de pieza | K3268 | |
| Descripción | Silicon N-channel power MOS FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOS FETs
2SK3268
Silicon N-channel power MOS FET
■ Features
• Avalanche energy capability guaranteed
• High-speed switching
• Low ON resistance Ron
• No secondary breakdown
• Low-voltage drive
• High electrostatic energy capability
■ Applications
• Non-contact relay
• Solenoid drive
• Motor drive
• Control equipment
• Switching mode regulator
■ Package
• Code
U-DL
• Pin Name
1: Gate
2: Drain
3: Source
■ Marking Symbol: K3268
■ Internal Connection
D
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability *
VDSS
VGSS
ID
IDP
EAS
100
±20
±15
±60
22.5
Power dissipation
Channel temperature
Storage temperature
PD 20
Ta = 25°C
1
Tch 150
Tstg −55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
G
S
Note) *: L = 0.2 mH, IL = 15 A, 1 pulse
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Diode forward voltage
Short-circuit forward transfer capacitance
(Common source)
VDSS
IDSS
IGSS
Vth
Yfs
RDS(on)
VDF
Ciss
Conditions
ID = 1 mA, VGS = 0
VDS = 80 V, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 12 A
VGS = 10 V, ID = 12 A
IDR = 15 A, VGS = 0
VDS = 10 V, VGS = 0, f = 1 MHz
Min Typ Max Unit
100 V
10 µA
±1 µA
2.0 4.0 V
6 11
S
70 100 mΩ
−1.4 V
960 pF
Short-circuit output capacitance
(Common source)
Coss
285 pF
Reverse transfer capacitance
(Common source)
Crss
85 pF
Turn-on delay time
Rise time
Fall time
Turn-off delay time
Thermal resistance (ch-c)
Thermal resistance (ch-a)
td(on)
tr
tf
td(off)
Rth(ch-c)
Rth(ch-a)
VDD = 30 V, ID = 12 A, RL = 2.5 Ω
VGS = 10 V
15 ns
10 ns
35 ns
65 ns
6.25 °C/W
125 °C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2008
SJG00031BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet K3268.PDF ] | |
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