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PDF K8Q2815UQB Data sheet ( Hoja de datos )
| Número de pieza | K8Q2815UQB | |
| Descripción | FLASH MEMORY | |
| Fabricantes | Samsung | |
| Logotipo |  |
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K8Q2815UQB
FLASH MEMORY
128Mb B-die Page NOR Specification
Dual Die Package (56TSOP)
(64Mb x 2)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure couldresult in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1 Revision 1.1
June 2007
1 page  
K8Q2815UQB
FLASH MEMORY
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vccq
Bank 0
Address
Vss
CE
OE
WE
RESET
RY/BY
WP/ACC
I/O
Interface
&
Bank
Control
Bank 1
Address
Bank 7
Address
A0~A22
DQ0~DQ15
Block
Inform
X
Dec
DXec
DXec
Bank 0
Cell Array
Y Dec
Y Dec
Bank 1
Cell Array
Bank 7
Cell Array
Y Dec
Erase
Control
Program
Control
Latch &
Control
Latch &
Control
Latch &
Control
High
Voltage
Gen.
5 Revision 1.1
June 2007
5 Page 
K8Q2815UQB
FLASH MEMORY
DEVICE OPERATION
Read Mode
The K8Q2815UQB is controlled by Chip Enable (CE), Output Enable (OE) and Write Enable (WE). When CE and OE are low and
WE is high, the data stored at the specified address location,will be the output of the device. The outputs are in high impedance state
whenever CE or OE is high. The K8Q2815UQB is available for Page mode. Page mode provides fast access time for high perfor-
mance system.
Standby Mode
The K8Q2815UQB features Stand-by Mode to reduce power consumption. This mode puts the device on hold when the device is
deselected by making CE high (CE = VIH). Refer to the DC characteristics for more details on stand-by modes.
Output Disable
The device outputs are disabled when OE is High (OE = VIH). The output pins are in high impedance state.
Automatic Sleep Mode
The K8Q2815UQB features Automatic Sleep Mode to minimize the device power consumption. When addresses remain steady for
tAA+30ns, the device automatically activates the Automatic Sleep Mode. In the sleep mode, output data is latched and always avail-
able to the system. When addresses are changed, the device provides new data without wait time.
Address
Outputs
tAA + 30ns
Data
Data
Data
Data
Auto Sleep Mode
Figure 1. AutoSleep Mode Operation
Data
Data
Autoselect Mode
The K8Q2815UQB offers the Autoselect Mode to identify manufacturer, device type and block protection verification by reading a
binary code. The Autoselect Mode allows programming equipment to automatically match the device to be programmed with its cor-
responding programming algorithm. In addition, this mode allows the verification of the status of write protected blocks. This mode is
used by two method. The one is high voltage method to be required VID (8.5V - 9.5V) on address pin A9. When A9 is held at VID and
the bank address or block address is asserted, the device outputs the valid data via DQ pins(see Table 7 and Figure 2). The rest of
addresses except A0, A1 and A6 are don′t care. The other is autoselect command method that the autoselect code is accessable by
the commamd sequence without VID. The manufacturer, device code and block protection verification can be read via the command
register. The Command Sequence is shown in Table 7 and Figure 3. The autoselect operation of block protection verification is initi-
ated by first writing two unlock cycle. The third cycle must contain the bank address and autoselect command (90H). If Block address
while (A6, A1, A0) = (0,1,0) is finally asserted on the address pin, it will produce a logical "1" at the device output DQ0 to indicate a
write protected block or a logical "0" at the device output DQ0 to indicate a write unprotected block. To terminate the autoselect oper-
ation, write Reset command (F0H) into the command register.
Note that Manufacturer and Device codes in the Autoselect mode can be read by A22=L only. (Chip1)
11 Revision 1.1
June 2007
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet K8Q2815UQB.PDF ] | |
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