STQ1HN60K3-AP Datasheet دیتاشیت PDF دانلود

دیتاشیت - STMicroelectronics - N-CHANNEL MOSFET

شماره قطعه	STQ1HN60K3-AP
شرح مفصل	N-CHANNEL MOSFET
تولید کننده	STMicroelectronics
آرم
1 Page No Preview Available ! STQ1HN60K3-AP N-channel 600 V, 6.7 Ω typ., 0.4 A SuperMESH3™ Power MOSFET in a TO-92 package Datasheet − production data 3 2 1 TO-92 Figure 1. Internal schematic diagram D(2) Features Order code VDS STQ1HN60K3-AP 600 V RDS(on) max 8Ω ID PTOT 0.4 A 3 W • 100% avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • Switching applications G(1) S(3) AM01476v1 Description This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. Order code STQ1HN60K3-AP Table 1. Device summary Marking Package 1HN60K3 TO-92 Packaging Ammopack April 2013 This is information on a product in full production. DocID024427 Rev 1 1/14 www.st.com 14
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دیتاشیت توصیه

شماره قطعه	شرح مفصل	تولید کنندگان
STQ1HN60K3-AP	N-CHANNEL MOSFET	STMicroelectronics

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