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NTJD1155L fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTJD1155L
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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NTJD1155L fiche technique
NTJD1155L
Power MOSFET
8 V, +1.3 A, High Side Load Switch with
LevelShift, PChannel SC88
The NTJD1155L integrates a P and NChannel MOSFET in a single
package. This device is particularly suited for portable electronic
equipment where low control signals, low battery voltages and high
load currents are needed. The PChannel device is specifically
designed as a load switch using ON Semiconductor stateoftheart
trench technology. The NChannel, with an external resistor (R1),
functions as a levelshift to drive the PChannel. The NChannel
MOSFET has internal ESD protection and can be driven by logic
signals as low as 1.5 V. The NTJD1155L operates on supply lines from
1.8 to 8.0 V and can drive loads up to 1.3 A with 8.0 V applied to both
VIN and VON/OFF.
Features
Extremely Low RDS(on) PChannel Load Switch MOSFET
Level Shift MOSFET is ESD Protected
Low Profile, Small Footprint Package
VIN Range 1.8 to 8.0 V
ON/OFF Range 1.5 to 8.0 V
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Input Voltage (VDSS, PCh)
ON/OFF Voltage (VGS, NCh)
Continuous Load Current
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
Power Dissipation
(Note 1)
Steady TA = 25°C
State TA = 85°C
Pulsed Load Current
tp = 10 ms
Operating Junction and Storage Temperature
VIN
VON/OFF
IL
PD
ILM
TTSJT,G
8.0
8.0
±1.3
±0.9
0.40
0.20
±3.9
55 to
150
V
V
A
W
A
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS 0.4 A
TL 260 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
JunctiontoAmbient – Steady State (Note 1)
RqJA
320 °C/W
JunctiontoFoot – Steady State (Note 1)
RqJF
220
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 5
1
http://onsemi.com
V(BR)DSS
8.0 V
RDS(on) TYP
130 mW @ 4.5 V
170 mW @ 2.5 V
260 mW @ 1.8 V
ID MAX
±1.3 A
SIMPLIFIED SCHEMATIC
4 2,3
Q2
6
5 Q1
1
MARKING
SC88
DIAGRAM
(SOT363)
1 CASE 419B
STYLE 30
TB M G
TB = Device Code
G
M = Date Code
1
G = PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
D1/G2 G1 S2
654
1 23
S1 D2 D2
ORDERING INFORMATION
Device
Package
Shipping
NTJD1155LT1G
SC88 3000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTJD1155L/D

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