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ON Semiconductor - Small Signal MOSFET

Numéro de référence NTZD5110N
Description Small Signal MOSFET
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NTZD5110N fiche technique
NTZD5110N
Small Signal MOSFET
60 V, 310 mA, Dual N−Channel
with ESD Protection, SOT−563
Features
Low RDS(on) Improving System Efficiency
Low Threshold Voltage
ESD Protected Gate
Small Footprint 1.6 x 1.6 mm
These are Pb−Free Devices
Applications
Load/Power Switches
Driver Circuits: Relays, Lamps, Displays, Memories, etc.
Battery Management/Battery Operated Systems
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State TA = 85°C
Steady State
VDSS
VGS
ID
PD
60
±20
294
212
250
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
TA = 25°C
tv5 s
TA = 85°C
tv5s
ID
PD
310
225
280
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IDM
TJ,
TSTG
IS
TL
590
−55 to
150
350
260
Gate−Source ESD Rating (HBM, Method 3015) ESD 1800
Unit
V
V
mA
mW
mA
mW
mA
°C
mA
°C
V
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t v 5 s (Note 1)
Symbol
RqJA
Max
500
447
Unit
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
V(BR)DSS
60
RDS(on) MAX
1.6 W @ 10 V
2.5 W @ 4.5 V
ID Max
310 mA
D1 D2
G1 G2
N−Channel
S1
MOSFET
S2
6
1
SOT−563
CASE 463A
MARKING
DIAGRAM
S7MG
G
S7 = Specific Device Code
M = Date Code
(Note: Microdot may be in either location)
PINOUT: SOT−563
S1 1
6 D1
G1 2
5 G2
D2 3
Top View
4 S2
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 6
1
Publication Order Number:
NTZD5110N/D

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