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NTHD5905T1 fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTHD5905T1
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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NTHD5905T1 fiche technique
NTHD5905T1
Power MOSFET
Dual P−Channel ChipFETt
3.0 Amps, 8 Volts
Features
Low RDS(on) for Higher Efficiency
Logic Level Gate Drive
Miniature ChipFET Surface Mount Package
Applications
Power Management in Portable and BatteryPowered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
DUAL PCHANNEL
3.0 AMPS, 8 VOLTS
RDS(on) = 90 mW
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Steady
Symbol 5 secs State
DrainSource Voltage
GateSource Voltage
Continuous Drain Current
(TJ = 150°C) (Note 1)
TA = 25°C
TA = 85°C
Pulsed Drain Current
Continuous Source Current
(Diode Conduction) (Note 1)
VDS 8.0
VGS "8.0
ID
"4.1
"2.9
"3.0
"2.2
IDM "10
IS 1.8 0.9
Maximum Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
Operating Junction and Storage
Temperature Range
PD
TJ, Tstg
2.1 1.1
1.1 0.6
55 to +150
1. Surface Mounted on 1x 1FR4 Board.
Unit
V
V
A
A
A
W
°C
S1
G1
S2
G2
D1
PChannel MOSFET
D2
PChannel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
A9 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NTHD5905T1 ChipFET
3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2005
February, 2005 Rev. XXX
1
Publication Order Number:
NTHD5905T1/D

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