DataSheetWiki


RZE002P02 fiches techniques PDF

ROHM Semiconductor - 1.2V Drive Pch MOSFET

Numéro de référence RZE002P02
Description 1.2V Drive Pch MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





1 Page

No Preview Available !





RZE002P02 fiche technique
1.2V Drive Pch MOSFET
RZE002P02
zStructure
Silicon P-channel MOSFET
zFeatures
1) High speed switching.
2) Small package (EMT3).
3) 1.2V drive.
zApplications
Switching
zPackage specifications
Package
Type
Code
Basic ordering unit (pieces)
RZE002P02
Taping
TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Souce current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
1 Pw10µs, Duty cycle1%
2 Each terminal mounted on a recommended land
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
20
±10
±200
±800
100
800
150
150
55 to +150
zDimensions (Unit : mm)
EMT3
1.6
0.3
(3)
0.7
0.55
(2) (1)
0.2 0.2
0.5 0.5
1.0
0.15
(1)Source
(2)Gate
(3)Drain
Abbreviated symbol : YK
zInner circuit
(3)
2
(2)
1
(1)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Source
(2) Gate
(3) Drain
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
zThermal resistance
Parameter
Channel to ambient
Each terminal mounted on a recommended land
Symbol
Rth(ch-a)
Limits
833
Unit
°C/W
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.06 - Rev.A

PagesPages 5
Télécharger [ RZE002P02 ]


Fiche technique recommandé

No Description détaillée Fabricant
RZE002P02 1.2V Drive Pch MOSFET ROHM Semiconductor
ROHM Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche