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PDF RZF013P01 Data sheet ( Hoja de datos )

Número de pieza RZF013P01
Descripción 1.5V Drive Pch MOSFET
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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No Preview Available ! RZF013P01 Hoja de datos, Descripción, Manual

1.5V Drive Pch MOSFET
RZF013P01
zStructure
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TUMT3
SOT-323T
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplications
Switching
(1) Gate
(2) Source
(3) Drain
Abbreviated symbol : XC
zEquivalent circuit
(3)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZF013P01
Taping
TL
3000
(1) 2
1
(2)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Source current
(Body diode)
Total power dissipation
Continuous
Pulsed
Continuous
Pulsed
ID
IDP 1
IS 1
ISP
PD 2
Channel temperature
Tch
Range of Storage temperature
1 Pw10µs, Duty cycle1%
2 When mounted on a ceramic board
Tstg
Limits
12
±10
±1.3
±5.2
0.6
5.2
0.8
150
55 to +150
zThermal resistance
Parameter
Channel to ambient
When mounted on a ceramic board
Symbol
Rth(ch-a)
Limits
156
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C / W
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.02 - Rev.A

1 page




RZF013P01 pdf
RZF013P01
zMeasurement circuits
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.1-1 Switching Time Measurement Circuit
VGS
IG(Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.2-1 Gate Charge Measurement Circuit
Data Sheet
Pulse Width
VGS 10%
50%
90% 50%
10%
10%
VDS
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
5/5
2009.02 - Rev.A

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