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PDF RZL025P01 Data sheet ( Hoja de datos )
| Número de pieza | RZL025P01 | |
| Descripción | 1.5V Drive Pch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RZL025P01 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Transistors
1.5V Drive Pch MOSFET
RZL025P01
RZL025P01
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
zApplication
Switching
zDimensions (Unit : mm)
TUMT6
Abbreviated symbol : YC
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZL025P01
Taping
TR
3000
zEquivalent circuit
(6) (5)
∗2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−12
±10
±2.5
±10
−0.8
−10
1.0
150
−55 to +150
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Unit
V
V
A
A
A
A
W
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board.
Symbol
Rth (ch-a) ∗
Limits
125
Unit
°C / W
(4)
∗1
(1) Drain
(2) Drain
(3) Gate
(3) (4) Source
(5) Drain
(6) Drain
1/5
1 page  
Transistors
zMeasurement circuits
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.15 Switching Time Test Circuit
RZL025P01
Pulse width
VGS 10%
50%
50%
90%
10% 10%
VDS
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.16 Switching Time Waveforms
VGS
IG (Const.)
RG
ID
D.U.T.
VDS
RL
VDD
Fig.17 Gate Charge Test Circuit
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.18 Gate Charge Waveform
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
5/5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RZL025P01.PDF ] | |
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