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RUE002N02 fiches techniques PDF

ROHM Semiconductor - 1.2V Drive Nch MOSFET

Numéro de référence RUE002N02
Description 1.2V Drive Nch MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RUE002N02 fiche technique
1.2V Drive Nch MOSFET
RUE002N02
zStructure
Silicon N-channel
MOSFET
zDimensions (Unit : mm)
EMT3
SOT-416
zApplications
Switching
zFeatures
1) Fast switching speed.
2) Low voltage drive (1.2V) makes this
device ideal for portable equipment.
3) Drive circuits can be simple.
zPackaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
RUE002N02
Taping
TL
3000
(1)Source
(2)Gate
(3)Drain
Abbreviated symbol : QR
zInner circuit
(3)
(2) 2
1
1 ESD PROTECTION DIODE
2 BODY DIODE
(1)
(1) Source
(2) Gate
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
Total power dissipation
ID
IDP1
PD2
Channel temperature
Tch
Range of storage temperature
Tstg
1 Pw10µs, Duty cycle1%
2 Each terminal mounted on a recommended land
Limits
20
±8
±200
±400
150
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
zThermal resistance
Parameter
Channel to ambient
Each terminal mounted on a recommended land
Symbol
Rth(ch-a)
Limits
833
Unit
°C / W
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.06 - Rev.A

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