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PDF RW1A025ZP Data sheet ( Hoja de datos )
| Número de pieza | RW1A025ZP | |
| Descripción | 1.5V Drive Pch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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1.5V Drive Pch MOSFET
RW1A025ZP
Structure
Silicon P-channel MOSFET
Features
1) Low On-resistance.
2) High power package.
3) Low voltage drive.(1.5v)
Application
Switching
Dimensions (Unit : mm)
WEMT6
(6) (5) (4)
Abbreviated symbol : ZF
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RW1A025ZP
Taping
T2R
8000
○
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
12
VGSS
10
ID 2.5
IDP *1
IS
10
0.5
ISP *1
10
PD *2
0.7
Tch 150
Tstg 55 to +150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(6)
(5)
(4)
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
∗2
∗1
(1) (2) (3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
179
Unit
C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
Downloaded from Elcodis.com electronic components distributor
1/5
2010.07 - Rev.A
1 page  
RW1A025ZP
Measurement circuits
VGS
RG
ID
D.U.T.
VDS
RL
VDD
Fig.1-1 Switching Time Measurement Circuit
IG(Const.)
VGS
ID
VDS
RL
D.U.T.
VDD
Fig.2-1 Gate charge measurement circuit
Pulse Width
VGS 10%
50%
90% 50%
10%
10%
VDS
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
Data Sheet
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
Downloaded from Elcodis.com electronic components distributor
5/5
2010.07 - Rev.A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RW1A025ZP.PDF ] | |
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