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PDF R5019ANX Data sheet ( Hoja de datos )
| Número de pieza | R5019ANX | |
| Descripción | 10V Drive Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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10V Drive Nch MOSFET
R5019ANX
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
Data Sheet
Dimensions (Unit : mm)
TO-220FM
10.0 φ3.2
4.5
2.8
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
R5019ANX
Bulk
-
500
Inner circuit
∗1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
IAS *2
EAS *2
PD *4
Tch
Tstg
500
30
19
76
19
76
9.5
24.3
50
150
55 to 150
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum temperature allowed.
*4 TC=25C
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
2.5
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.10 - Rev.A
1 page  
R5019ANX
Measurement circuits
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.1-1 Switching Time Measurement Circuit
VGS
IG(Const.)
RG
ID
RL
VDS
D.U.T.
VDD
Fig.2-1 Gate Charge Measurement Circuit
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
VGS
RG
IAS
D.U.T.
VDS
L
VDD
Fig.3-1 Avalanche Measurement Circuit
V(BR)DSS
IAS
VDD
EAS =
1
2
L IAS2
V(BR)DSS
V(BR)DSS - VDD
Fig.3-2 Avalanche Waveform
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/5
2011.10 - Rev.A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet R5019ANX.PDF ] | |
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