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RZM002P02 fiches techniques PDF

ROHM Semiconductor - 1.2V Drive Pch MOSFET

Numéro de référence RZM002P02
Description 1.2V Drive Pch MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RZM002P02 fiche technique
1.2V Drive Pch MOSFET
RZM002P02
zStructure
Silicon P-channel MOSFET
zFeatures
1) High Speed Switching.
2) Small package (VMT3).
3) Ultra Low Voltage drive. (1.2V drive)
zDimensions (Unit : mm)
VMT3
SOT-723
1.2
0.32
(3)
(1)Gate
(2)Source
(3)Drain
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
Abbreviated symbol : YK
zApplications
Switching
zInner circuit
(3)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RZM002P02
Taping
T2L
8000
2
(1)
1
(2)
1 ESD PROTECTION DIODE
2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Continuous
Source current (Body diode)
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
1 Pw10µs, Duty cycle1%
2 Each terminal mounted on a recommended land
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
20
±10
±200
±800
100
800
150
150
55 to +150
zThermal resistance
Parameter
Channel to ambient
Each terminal mounted on a recommended land
Symbol
Rth(ch-a)
Limits
833
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
Unit
°C/W
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.06 - Rev.B

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