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Numéro de référence | RW1E014SN | ||
Description | 4V Drive Nch MOSFET | ||
Fabricant | ROHM Semiconductor | ||
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1 Page
4V Drive Nch MOSFET
RW1E014SN
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low On-resistance, High speed switching.
2) Built-in G-S Protection Diode.
3) Space Saving, Small Surface Mount Package (WEMT6).
zApplications
Switching
zDimensions (Unit : mm)
WEMT6
(6) (5) (4)
(1) (2) (3)
Abbreviated symbol : PN
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RW1E014SN
Taping
T2R
8000
zInner circuit
(6) (5)
∗2
(4)
∗1
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(3)
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
30
±20
±1.4
±2.8
0.5
2.8
0.7
150
−55 to +150
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board
Symbol
Rth (ch-a) ∗
Limits
179
Unit
V
V
A
A
A
A
W
°C
°C
Unit
°C / W
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.06 - Rev.A
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Pages | Pages 5 | ||
Télécharger | [ RW1E014SN ] |
No | Description détaillée | Fabricant |
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