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Numéro de référence | ATP103 | ||
Description | P-Channel Power MOSFET | ||
Fabricant | ON Semiconductor | ||
Logo | |||
1 Page
Ordering number : ENA1623A
ATP103
P-Channel Power MOSFET
–30V, –55A, 13mΩ, Single ATPAK
http://onsemi.com
Features
• Low ON-resistance
• Slim package
• Halogen free compliance
• Large current
• 4.5V drive
• Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--10V, L=100μH, IAV=--28A
*2 L≤100μH, Single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
--30
±20
--55
--165
50
150
--55 to +150
57
--28
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP103-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP103
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
4,2
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/D0209PA TKIM TC-00002144 No. A1623-1/7
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Pages | Pages 7 | ||
Télécharger | [ ATP103 ] |
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