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Número de pieza | ATP602 | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ATP602 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Ordering number : ENA1543A
ATP602
N-Channel Power MOSFET
600V, 5A, 2.7Ω, ATPAK
http://onsemi.com
Features
• ON-resistance RDS(on)=2.1Ω (typ.)
• 10V drive
• Input capacitance Ciss=350pF (typ.)
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=99V, L=5mH, IAV=5A (Fig.1)
*2 L≤5mH, Single pulse
Conditions
PW≤10μs, duty cycle≤1%
Tc=25°C
Ratings
600
±30
5
15
70
150
--55 to +150
74
5
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
ATP602-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP602
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
2,4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/12710QB TKIM TC-00002087 No. A1543-1/7
1 page Taping Specification
ATP602-TL-H
ATP602
No. A1543-5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet ATP602.PDF ] |
Número de pieza | Descripción | Fabricantes |
ATP602 | N-Channel Power MOSFET / Transistor | ON Semiconductor |
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