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ON Semiconductor - P-Channel Power MOSFET

Numéro de référence ATP301
Description P-Channel Power MOSFET
Fabricant ON Semiconductor 
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ATP301 fiche technique
Ordering number : ENA1457A
ATP301
P-Channel Power MOSFET
–100V, –28A, 75mΩ, ATPAK
http://onsemi.com
Features
ON-resistance RDS(on)=57mΩ (typ.)
10V drive
Input capacitance Ciss=4000pF (typ.)
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=--30V, L=100μH, IAV=--28A
*2 L100μH, Single pulse
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
--100
±20
--28
--112
70
150
--55 to +150
54
--28
Unit
V
V
A
A
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
6.5 1.5
0.4
4
ATP301-TL-H
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP301
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
Electrical Connection
2,4
1
3
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/42209QA MS IM TC-00001941 No. A1457-1/7

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