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Número de pieza | STD27N3LH5 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STD27N3LH5, STP27N3LH5
STU27N3LH5
N-channel 30 V, 0.014 Ω, 27 A, DPAK, IPAK, TO-220
STripFET™ V Power MOSFET
Features
Type
VDSS RDS(on) max
STD27N3LH5 30 V
0.019 Ω
STP27N3LH5
30 V
0.020 Ω
STU27N3LH5 30 V
0.020 Ω
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
ID
27 A
27 A
27 A
Application
■ Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
figure of merit (FOM).
IPAK
3
2
1
3
1
DPAK
TO-220
3
2
1
Figure 1. Internal schematic diagram
D (TAB or 2)
G (1)
Table 1. Device summary
Order codes
STD27N3LH5
STU27N3LH5
STP27N3LH5
Marking
27N3LH5
27N3LH5
27N3LH5
S (3)
sc08440
Package
DPAK
IPAK
TO-220
Packaging
Tape and reel
Tube
Tube
March 2011
Doc ID 15617 Rev 3
1/21
www.st.com
21
1 page STD27N3LH5, STP27N3LH5, STU27N3LH5
Electrical characteristics
Table 6. Switching on/off (resistive load)
Symbol
Parameter
Test conditions
Min.
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
VDD = 15 V, ID = 13.5 A,
RG = 4.7 Ω, VGS = 10 V
(Figure 15 and Figure 20)
VDD = 15 V, ID = 13.5 A,
RG = 4.7 Ω, VGS = 10 V
(Figure 15 and Figure 20)
-
-
Typ.
4
22
13
2.8
Max. Unit
ns
-
ns
ns
-
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD Forward on voltage
ISD = 13.5 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 27 A, di/dt = 100
A/µs, VDD = 25 V
(Figure 17)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
27 A
-
108 A
- 1.1 V
16.2
- 7.8
1
ns
nC
A
Doc ID 15617 Rev 3
5/21
5 Page STD27N3LH5, STP27N3LH5, STU27N3LH5
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 15617 Rev 3
11/21
11 Page |
Páginas | Total 21 Páginas | |
PDF Descargar | [ Datasheet STD27N3LH5.PDF ] |
Número de pieza | Descripción | Fabricantes |
STD27N3LH5 | N-channel Power MOSFET | STMicroelectronics |
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