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PDF STP1N105K3 Data sheet ( Hoja de datos )
| Número de pieza | STP1N105K3 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STF1N105K3, STFW1N105K3,
STP1N105K3
N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3™
Power MOSFET in TO-220FP, TO-3PF and TO-220 packages
Datasheet — production data
Features
Order codes
VDS
RDS(on)
max
ID PTOT
STF1N105K3
STFW1N105K3 1050 V
STP1N105K3
11 Ω
20 W
1.4 A
60 W
■ Gate charge minimized
■ Extremely large avalanche performance
■ 100% avalanche tested
■ Very low intrinsic capacitance
TAB
3
2
1
TO-220FP
1
3
2
1
TO-3PF
3
2
1
TO-220
Applications
■ Switching applications
Figure 1. Internal schematic diagram
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
'
*
6
Table 1. Device summary
Order codes
STF1N105K3
STFW1N105K3
STP1N105K3
Marking
1N105K3
Package
TO-220FP
TO-3PF
TO-220
$0Y
Packaging
Tube
January 2013
This is information on a product in full production.
Doc ID 023509 Rev 2
1/18
www.st.com
18
1 page  
STF1N105K3, STFW1N105K3, STP1N105K3
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min. Typ. Max. Unit
6 ns
VDD = 525 V, ID = 0.6 A,
RG=4.7 Ω, VGS=10 V
-
7
ns
-
(see Figure 20)
27 ns
50 ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM
(1)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD= 1.2 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 1.2 A, VDD= 60 V
di/dt = 100 A/μs,
(see Figure 19)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 1.2 A,VDD= 60 V
di/dt=100 A/μs,
Tj=25 °C(see Figure 19)
1. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
-
-
-
-
1.4 mA
5.6 A
1.5 V
244 ns
1 μC
9A
330 ns
1.3 μC
8A
Doc ID 023509 Rev 2
5/18
5 Page 
STF1N105K3, STFW1N105K3, STP1N105K3
Table 8. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
Package mechanical data
mm
Typ. Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
16
30.6
10.6
3.6
16.4
9.3
3.2
Doc ID 023509 Rev 2
11/18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet STP1N105K3.PDF ] | |
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