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PDF STL100N10F7 Data sheet ( Hoja de datos )
| Número de pieza | STL100N10F7 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL100N10F7
N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET™ VII DeepGATE™
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Features
1
2
3
4
PowerFLAT™ 5x6
Figure 1. Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Order code
STL100N10F7
VDSS
RDS(on)
max
ID
PTOT
100 V 0.0073 Ω 19 A 5 W
• Ultra low on-resistance
• 100% avalanche tested
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using the 7th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
S(1, 2, 3)
12 34
Top View
AM15540v2
Order code
STL100N10F7
Table 1. Device summary
Marking
Package
100N10F7
PowerFLAT™ 5x6
Packaging
Tape and reel
July 2013
This is information on a product in full production.
DocID023656 Rev 4
1/16
www.st.com
16
1 page  
STL100N10F7
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 38 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 19 A,
di/dt = 100 A/µs,
VDD=80 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
- 19 A
- 76 A
- 1.2 V
- 77
ns
- 146
nC
-4
A
DocID023656 Rev 4
5/16
5 Page 
STL100N10F7
Package mechanical data
Figure 19. PowerFLAT 5x6 type S-R drawing
58
Bottom View
Pin 1
identification
41
Side View
85
.
Pin 1
1
identification
Top View
4
8231817_Rev.F_Ribbon type S-R
DocID023656 Rev 4
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet STL100N10F7.PDF ] | |
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