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Numéro de référence | STP100N10F7 | ||
Description | N-channel Power MOSFET | ||
Fabricant | STMicroelectronics | ||
Logo | |||
1 Page
STB100N10F7, STD100N10F7,
STF100N10F7, STP100N10F7
N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET™ VII DeepGATE™
2
Power MOSFET in D PAK, DPAK, TO-220FP and TO-220
Datasheet - production data
TAB
3
1
D2PAK
TAB
3
1
DPAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
'Ć7$%
*
Features
Order codes V
DS
RDS(on)
max
STB100N10F7
STD100N10F7
100 V 0.008 Ω
STF100N10F7
STP100N10F7
• Ultra low on-resistance
• 100% avalanche tested
IP
D TOT
80 A
80 A
45 A
80A
120 W
120W
30 W
150 W
Applications
• Switching applications
Description
th
These devices utilize the 7 generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
6
$0Y
Order codes
STB100N10F7
STD100N10F7
STF100N10F7
STP100N10F7
Table 1. Device summary
Marking
Packages
2
D PAK
100N10F7
DPAK
TO-220FP
TO-220
November 2013
This is information on a product in full production.
DocID023737 Rev 4
Packaging
Tape and reel
Tape and reel
Tube
Tube
1/23
www.st.com
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Pages | Pages 23 | ||
Télécharger | [ STP100N10F7 ] |
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