Datasheet GA05JT12-247-PDF.HTML Equivalent ( PDF )

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GA0 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	GA01PNS100-CAL	Silicon Carbide PiN Diode Chip Silicon Carbide PiN Diode Chip Die Datasheet GA01PNS100-CAL VRRM IF @ 25 oC QC = 10000 V = 2A = 5 nC Features  10 kV blocking  210 °C operating temperature  Fast turn off characteristics  Soft reverse recovery characteristics  Ultra-Fast high temperature switching Advantages	GeneSiC	diode
2	GA01PNS100-CAU	Silicon Carbide PiN Diode Chip Silicon Carbide PiN Diode Chip Die Datasheet GA01PNS100-CAU VRRM IF @ 25 oC QC = 10000 V = 2A = 5 nC Features  10 kV blocking  210 °C operating temperature  Fast turn off characteristics  Soft reverse recovery characteristics  Ultra-Fast high temperature switching Advantages	GeneSiC	diode
3	GA01PNS150-CAU	Silicon Carbide PiN Diode Chip Silicon Carbide PiN Diode Chip Die Datasheet GA01PNS150-CAU VRRM IF @ 25 oC = 15000 V = 1A Features  15 kV blocking  210 °C operating temperature  Fast turn off characteristics  Soft reverse recovery characteristics  Ultra-Fast high temperature switching Advantages  Highe	GeneSiC	diode
4	GA01PNS80-CAL	Silicon Carbide PiN Diode Chip Silicon Carbide PiN Diode Chip Die Datasheet GA01PNS80-CAL VRRM IF @ 25 oC = 8000 V = 2A Features  8 kV blocking  210 °C operating temperature  Fast turn off characteristics  Soft reverse recovery characteristics  Ultra-Fast high temperature switching Die Size = 2.4 mm x 2.	GeneSiC	diode
5	GA01PNS80-CAU	Silicon Carbide PiN Diode Chip Silicon Carbide PiN Diode Chip Die Datasheet GA01PNS80-CAU VRRM IF @ 25 oC = 8000 V = 2A Features  8 kV blocking  210 °C operating temperature  Fast turn off characteristics  Soft reverse recovery characteristics  Ultra-Fast high temperature switching Advantages  Reduced	GeneSiC	diode
6	GA03IDDJT30-FR4	Isolated Gate Driver Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features  Requires single 12 V voltage supply  Pin Out compatible with MOSFET driver boards  Multiple Internal level topology for low drive losses  High-side drive capable with 3000 V isolation  5000 V Sign	GeneSiC	driver
7	GA03JT12-247	Junction Transistor Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Tempera	GeneSiC	transistor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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