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IPA60R250CP fiches techniques PDF

Infineon Technologies - Power Transistor

Numéro de référence IPA60R250CP
Description Power Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPA60R250CP fiche technique
CoolMOS® Power Transistor
Features
• Lowest figure-of-merit RONxQg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
CoolMOS CP is designed for:
• Hard switching SMPS topologies
Product Summary
V DS @ Tj,max
R DS(on),max@T j= 25°C
Q g,typ
6.6
IPA60R250CP
650 V
0.250
26 nC
PG-TO220 FP
Type
IPA60R250CP
Package
PG-TO220FP
Marking
66RR225909PP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current2)
Pulsed drain current3)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
3),4)
AR
Avalanche
current,
repetitive
t
3),4)
AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
Mounting torque
Symbol Conditions
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS
E AR
I AR
dv /dt
V GS
I D=5.2 A, V DD=50 V
I D=5.2 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
P tot T C=25 °C
T j, T stg
M2.5 screws
Value
12
8
40
345
0.52
5.2
50
±20
±30
33
-55 ... 150
50
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
Rev.2.1
page 1
2012-01-09

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