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PDF APT37M100B2 Data sheet ( Hoja de datos )

Número de pieza APT37M100B2
Descripción N-Channel MOSFET
Fabricantes Microsemi 
Logotipo Microsemi Logotipo



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APT37M100B2
APT37M100L
1000V, 37A, 0.33Ω Max
N-Channel MOSFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in yback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
T-Ma x TM
TO-264
APT37M100B2
APT37M100L
D
Single die MOSFET
G
S
FEATURES
• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS
TJ,TSTG
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Ratings
37
23
140
±30
2165
18
Unit
A
V
mJ
A
Min Typ Max Unit
1135 W
0.11
°C/W
0.11
-55 150
°C
300
0.22 oz
6.2 g
10 in·lbf
1.1 N·m
Microsemi Website - http://www.microsemi.com

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