GA15IDDJT22-FR4 Datasheet PDF - GeneSiC
| Part Number | GA15IDDJT22-FR4 | |
| Description | Non-Isolated Gate Driver | |
| Manufacturers | GeneSiC | |
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Non-Isolated Gate Driver
Gate Driver for SiC SJT with
Signal Isolation
Features
Requires single 12 V voltage supply
Pin Out compatible with MOSFET driver boards
Multiple internal voltage level topology for low drive losses
Point-of-load (POL), non-isolated design
5000 V Signal Isolation (up to 10 s)
Capable of high gate currents with 27 W maximum power
RoHS Compliant
Product Image
GA15IDDJT22-FR4
VISO,SIG
PDRIVE
fmax
= 5000 V
= 27 W
= 350 kHz
Section I: Introduction
The GA15IDDJT22-FR4 provides an optimized gate drive solution for 10 and 20 mΩ SiC Junction Transistors (SJT). The board utilizes DC/DC
converters and FOD3182 signal opto-isolation as well as totem-pole gate driver ICs providing fast switching and customizable continuous gate
currents necessary for any SJT device. Its footprint and 12 V supply voltage make it a plug-in replacement for existing SiC MOSFET gate drive
solutions.
Figure 1: Simplified GA15IDDJT22-FR4 Gate Drive Board Block Diagram
Section II: Compatibility with SiC SJTs
The GA15IDDJT22-FR4 has an installed gate resistance (RG) of 0.7 Ω on-board which may need to be modified by the user for safe operation
of certain SJT parts. Please see the table below and Section VI for more information.
Table 1: GA15IDDJT22-FR4 – SiC SJT Compatibility Information Table
SJT Part Number
Compatible
Notes
GA03JT12-247
GA05JT12-247/263
GA06JT12-247
GA10JT12-247/263
GA20JT12-247/263
GA50JT12-247
GA100JT12-227
GA04JT17-247
GA16JT17-247
GA50JT17-247
GA100JT17-227
GA50SICP12-227
GA100SICP12-227
Yes Driver GA03IDDJT30-FR4 Recommended
Yes Driver GA03IDDJT30-FR4 Recommended
Yes Driver GA03IDDJT30-FR4 Recommended
Yes Driver GA03IDDJT30-FR4 Recommended
Yes Driver GA03IDDJT30-FR4 Recommended
Yes
Yes Reduction of RG values recommended (Section VI)
Yes Driver GA03IDDJT30-FR4 Recommended
Yes Driver GA03IDDJT30-FR4 Recommended
Yes
Yes Reduction of RG values recommended (Section VI)
Yes
Yes Reduction of RG values recommended (Section VI)
Sept. 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 1 of 9
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Non-Isolated Gate Driver GA15IDDJT22-FR4
Figure 5: Location of RG (RG1 and RG2 in parallel) on GA15IDDJT22-FR4 driver for substitution
B: Gate Capacitor CG Modification
An external gate capacitor CG connected directly to the device gate pin delivers the positive current peak IG,ON during device turn-on and the
negative current peak IG,OFF during turn-off. A high value resistor R4 in parallel with CG sets the SJT gate pin to a defined potential -VEE (-8.7 V)
during steady off-state.
At device turn-on, CG is pulled to the GA15IDDJT22-FR4 internal voltage level VGH (15 V) which produces a transient peak of gate voltage and
current. This current peak rapidly charges the internal SJT CGS and CGD capacitances. A Schottky diode, D1, in series with RG blocks any CG
induced current from draining out through RG and ensures that all of the charge within CG flows only into the device gate, allowing for an ultra-
fast device turn-on. During steady on-state, a potential of VGH - VGS = VGH – 3 V is across CG. When the device is turned off, CG is pulled to
negative VEE and VGS is pulled to a transient peak of VGS,turn-off = VEE – (VGH – 3 V), this induces the negative current peak IG,off out of the gate
which discharges the SJT internal capacitances.
C: Voltage Supply Selection
The GA15IDDJT22-FR4 gate drive design features three internal supply voltages VGH, VGL, and VEE (listed in Table 4) supplied through two
DC/DC converters. During device turn-on, VGH charges the capacitor CG thereby delivering the narrow width, high current pulse IG,ON to the SJT
gate and charges the SJT’s internal terminal capacitances CGD and CGS. For a given level of parasitic inductance in the gate circuit and SJT
package, the rise time of IG,ON is controlled by the value of VGH and CG. During the steady on-state, VGL in combination with the internal and
external gate resistances provides a continuous gate current for the SJT to remain on. The VEE supply controls the gate negative voltage
during turn-off and steady off-state for faster switching and to avoid spurious turn-on which may be caused by external circuit noise. The
power rating of the provided voltage supplies are adequate to meet the gate drive power requirements as determined by
1
,2
1
,2
,,
Table 4: GA15IDDJT22-FR4 Gate Drive Voltage Supply Component List
Symbol
Parameter
Values
Range
Default
VGH Supply Voltage, Gate Capacitor 13 – 20
+ 15.0
VGL Supply Voltage, Gate Resistor 4.5 – 6.0
+ 5.0
VEE Negative Supply Voltage
-10 – GND - 8.7
D: Signal Isolation
The gate supply signal is suggested to be isolated to twice the working VDS on the SJT during off-state to provide adequate protection to
circuitry external to the gate drive circuit. This may be done using opto or galvanic isolation techniques.
Sept. 2015
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 5 of 9
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GA15IDDJT22-FR4 electronic component. |
| Information | Total 9 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ GA15IDDJT22-FR4.PDF Datasheet ] | |
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