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Datasheet AF2010-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
AF2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | AF2 | Pentode page 1 2 3
AF2 sheet 2 2 FP
date 1947.12.01 1953.12.12 1999.06.26
 Philips data | | |
| 2 | AF2010 | ANTI-SULFURATED CHIP RESISTORS DATA SHEET
ANTI-SULFURATED CHIP RESISTORS
AF series 5%, 1%
sizes 0201/0402/0603/0805/1206/1210/1218/2010/2512
RoHS compliant & Halogen free
Product specification – September 27, 2013 V.1
Chip Resistor Surface Mount AF SERIES 0201 to 2512
Product specification 2
8
SCOPE This specification descr  YAGEO data | | |
| 3 | AF2301P | 20V P-Channel Enhancement Mode MOSFET AF2301P
20V P-Channel Enhancement Mode MOSFET Features
- Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package
Product Summary
VDS = - 20V RDS (on), [email protected], [email protected] =130  ETC mosfet | | |
| 4 | AF2301PW | 20V P-Channel Enhancement Mode MOSFET AF2301P
20V P-Channel Enhancement Mode MOSFET Features
- Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package
Product Summary
VDS = - 20V RDS (on), [email protected], [email protected] =130 ETC mosfet | | |
| 5 | AF2301PWA | 20V P-Channel Enhancement Mode MOSFET AF2301P
20V P-Channel Enhancement Mode MOSFET Features
- Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package
Product Summary
VDS = - 20V RDS (on), [email protected], [email protected] =130 ETC mosfet | | |
| 6 | AF2301PWLA | 20V P-Channel Enhancement Mode MOSFET AF2301P
20V P-Channel Enhancement Mode MOSFET Features
- Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package
Product Summary
VDS = - 20V RDS (on), [email protected], [email protected] =130 ETC mosfet | | |
| 7 | AF2302N | 20V N-Channel Enhancement Mode MOSFET AF2302N
20V N-Channel Enhancement Mode MOSFET Features
- Advanced trench process technology - High density cell design for ultra low on-resistance - Excellent thermal and electrical capabilities - Compact and low profile SOT-23 package
Product Summary
VDS = 20V RDS (on), [email protected], [email protected] =65mΩ.  Anachip mosfet | |
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