|
|
Numéro de référence | IPD160N04LG | ||
Description | Power-Transistor | ||
Fabricant | Infineon Technologies | ||
Logo | |||
1 Page
Type
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
Type
IPD160N04L G
Product Summary
V DS
R DS(on),max
ID
IPD160N04L G
40 V
16 mΩ
30 A
Package
Marking
PG-TO252-3
160N04L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
ID
I D,pulse
I AS
E AS
V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
T C=25 °C
T C=25 °C
I D=30 A, R GS=25 Ω
Value
30
23
28
20
210
30
5
±20
Unit
A
mJ
V
Rev. 1.0
page 1
2007-12-06
|
|||
Pages | Pages 9 | ||
Télécharger | [ IPD160N04LG ] |
No | Description détaillée | Fabricant |
IPD160N04LG | Power-Transistor | Infineon Technologies |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |