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IPD160N04LG fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPD160N04LG
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPD160N04LG fiche technique
Type
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
Type
IPD160N04L G
Product Summary
V DS
R DS(on),max
ID
IPD160N04L G
40 V
16 m
30 A
Package
Marking
PG-TO252-3
160N04L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
ID
I D,pulse
I AS
E AS
V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
T C=25 °C
T C=25 °C
I D=30 A, R GS=25
Value
30
23
28
20
210
30
5
±20
Unit
A
mJ
V
Rev. 1.0
page 1
2007-12-06

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