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PDF IPD170N04NG Data sheet ( Hoja de datos )
| Número de pieza | IPD170N04NG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPD170N04NG (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Type
OptiMOS®3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
Type
IPD170N04N G
Product Summary
V DS
R DS(on),max
ID
IPD170N04N G
40 V
17 mΩ
30 A
Package
Marking
PG-TO252-3
170N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
ID
I D,pulse
I AS
E AS
V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
T C=25 °C
T C=25 °C
I D=30 A, R GS=25 Ω
Value
30
23
210
30
5
±20
Unit
A
mJ
V
Rev. 1.0
page 1
2007-12-11
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
70
IPD170N04N G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
40
60
10 V
50
40
30
20
7V
6.5 V
6V
35 5.5 V
30
6V
25
20
15
10
6.5 V
7V
10
0
0
12
V DS [V]
5.5 V
5V
3
5
0
0 10 20 30
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
70
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
40
10 V
40
60
50
40
30
20
10
0
0
Rev. 1.0
175 °C
25 °C
246
V GS [V]
35
30
25
20
15
10
5
0
80
page 5
20 40
I D [A]
60
2007-12-11
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD170N04NG.PDF ] | |
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