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SPD04P10PLG fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence SPD04P10PLG
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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SPD04P10PLG fiche technique
SIPMOS® Power-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
° Qualified according to AEC Q101
Product Summary
V DS
R DS(on),max
ID
SPD04P10PL G
-100 V
850 m
-4.2 A
PG-TO-252-3
Type
Package
SPD04P10PL G PG-TO252-3
Marking
04P10PL
Lead free
Yes
Packing
Non dry
Tape and reel information
1000 pcs / reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS I D=-4.2 A, R GS=25
V GS
P tot T C=25 °C
T j, T stg
JESD22-A114-HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value
steady state
-4.2
3.0
-16.8
57
±20
38
-55 ... 175
1A (250 V to 500 V)
260 °C
55/175/56
Unit
A
mJ
V
W
°C
Rev 1.6
page 1
2012-09-10

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