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Número de pieza | BSC110N06NS3G | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
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OptiMOSTM3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
BSC110N06NS3 G
BSC110N06NS3 G
Product Summary
VDS
RDS(on),max
ID
60 V
11 mW
50 A
Package
PG-TDSON-8
Marking
110N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Value
50
33
Unit
A
V GS=10 V, T C=25 °C,
R thJA =50K/W2)
12
Pulsed drain current3)
I D,pulse T C=25 °C
200
Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W
22 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev.2.4
page 1
2013-05-21
1 page 5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
200
10 V
150
100
50
0
012
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
120
7V
6V
5.5 V
5V
3
BSC110N06NS3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
28
26 5 V 5.5 V 6 V
7V
24
22
20
18
16
14
12
10 10 V
8
6
4
2
0
4 0 50 100 150 200
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
100
60
80
60 40
40
20
0
0
Rev.2.4
150 °C 25 °C
246
VGS [V]
20
0
8 0 20 40 60 80 100 120
ID [A]
page 5
2013-05-21
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BSC110N06NS3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
BSC110N06NS3G | Power-Transistor | Infineon Technologies |
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