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BSO200P03SH fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence BSO200P03SH
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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BSO200P03SH fiche technique
OptiMOS™-P Power-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• 150°C operating temperature
• Qualified according JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V DS
R DS(on),max
ID
BSO200P03S H
-30 V
20 m
-9.1 A
PG-DSO-8
Type
BSO200P03S H
Package
PG-DSO-8
Marking
200P3S
Lead free
Yes
Halogen free
Yes
packing
dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C1)
T A=70 °C1)
T A=25 °C2)
Value
Unit
10 secs steady state
-9.1 -7.4 A
-7.3 -5.9
-36.4
Avalanche energy, single pulse
E AS I D=-9.1 A, R GS=25
98 mJ
Gate source voltage
Power dissipation
Operating and storage temperature
ESD rating
V GS
P tot T A=25 °C1)
T j, T stg
Soldering temperature
IEC climatic category; DIN IEC 68-1
±25
2.36
1.56
-55 ... 150
V
W
°C
260
55/150/56
°C
Rev. 1.3
page 1
2010-02-15

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