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Infineon Technologies - Power-Transistor

Numéro de référence SPP08P06PH
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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SPP08P06PH fiche technique
SPP08P06P H
SIPMOS® Power-Transistor
Features
Product Summary
· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
Drain source voltage
VDS -60 V
Drain-source on-state resistance RDS(on) 0.3 W
Continuous drain current
ID -8.8 A
· 175°C operating temperature
• Pb-free lead plating; RoHS compliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Type
SPP08P06P H
Package
PG-TO220-3
Pin 1 PIN 2/4 PIN 3
GDS
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
Pulsed drain current
TC = 25 °C
ID puls
Avalanche energy, single pulse
ID = -8.8 A , VDD = -25 V, RGS = 25 W
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = -8.8 A, VDS = -48 , di/dt = 200 A/µs,
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
-8.8
-6.2
-35.2
70
4.2
6
±20
42
-55...+175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 1.6
Page 1
2011-08-31

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