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NXP Semiconductors - Schottky barrier diodes

Numéro de référence 1PS88SB82
Description Schottky barrier diodes
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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1PS88SB82 fiche technique
1PS66SB82; 1PS88SB82
15 V, 30 mA low Cd Schottky barrier diodes
Rev. 04 — 13 January 2010
Product data sheet
1. Product profile
1.1 General description
Epitaxial low capacitance Schottky barrier diodes encapsulated in very small SMD plastic
packages.
Table 1. Product overview
Type number
Package
NXP
1PS66SB82
SOT666
1PS88SB82
SOT363
JEITA
-
SC-88
Configuration
triple isolated diode
triple isolated diode
1.2 Features
„ Low diode capacitance
„ Low forward voltage
„ Very small SMD plastic packages
1.3 Applications
„ Digital applications:
‹ Ultra high-speed switching
‹ Clamping circuits
„ RF applications:
‹ Diode ring mixer
‹ RF detector
‹ RF voltage doubler
1.4 Quick reference data
Table 2.
Symbol
IF
VR
Cd
Quick reference data
Parameter
Conditions
continuous forward current
continuous reverse voltage
diode capacitance
VR = 0 V;
f = 1 MHz;
see Figure 4
Min Typ Max Unit
- - 30 mA
- - 15 V
- 1 - pF

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