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Toshiba Semiconductor - Silicon Diffused Type Rectifier

Numéro de référence 1R5GZ41
Description Silicon Diffused Type Rectifier
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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1R5GZ41 fiche technique
1R5BZ41,1R5GZ41
TOSHIBA Rectifier Silicon Diffused Type
1R5BZ41, 1R5GZ41
General Purpose Rectifier Applications
Average Forward Current: IF (AV) = 1.5 A (Ta = 35°C)
Repetitive Peak Reverse Voltage: VRRM = 100 V, 400 V
Peak One Cycle Surge Forward Current (non repetitive): IFSM = 150 A
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak
reverse voltage
1R5BZ41
1R5GZ41
Average forward current (Ta = 35°C)
Peak one cycle surge forward current
(non repetitive)
Junction temperature
Storage temperature range
Symbol
VRRM
IF (AV)
IFSM
Tj
Tstg
Rating
100
400
1.5
150 (50 Hz)
165 (60 Hz)
40 to 150
40 to 150
Unit
V
A
A
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Thermal resistance (junction to ambient)
Symbol
VFM
IRRM
Rth (j-a)
Test Condition
IFM = 0.5 A
VRRM = Rated
DC
JEDEC
JEITA
TOSHIBA
3-4B1A
Weight: 0.47 g (typ.)
Min Typ. Max Unit
0.95
V
― ― 10 µA
― ― 90 °C /W
Marking
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Abbreviation Code
1R5B
1R5G
Part No.
1R5BZ41
1R5GZ41
1 2004-07-07

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