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Toshiba Semiconductor - Silicon Diffused Type Rectifier

Numéro de référence 1R5NH45
Description Silicon Diffused Type Rectifier
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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1R5NH45 fiche technique
1R5NH45
TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
1R5NH45
SWITCHING MODE POWER SUPPLY APPLICATIONS
Unit: mm
l Repetitive Peak Reverse Voltage
l Average Forward Current
l Very Fast ReverseRecovery Time
: VRRM = 1000V
: IF (AV) = 1.5A
: trr = 200ns (Max)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Forward Current
(Ta = 25°C)
Peak One Cycle Surge Forward
Current (NonRepetitive)
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
IF (AV)
IFSM
Tj
Tstg
RATING
1000
1.5
30 (50Hz)
33 (60Hz)
40~150
40~150
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
UNIT
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.47g
34B1A
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse
Current
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
SYMBOL
TEST CONDITION
VFM
IRRM
trr
tfr
Rth (ja)
IFM = 1.5A
VRRM = 1000V
IF = 1A, di / dt = 30A / µs
IF = 1.0A
Junction to Ambient
MIN TYP. MAX UNIT
― ― 1.5 V
― ― 100 µA
― ― 200 ns
― ― 750 ns
― ― 58 °C / W
Marking
1 2001-07-09

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