DataSheetWiki


1S1829 fiches techniques PDF

Toshiba Semiconductor - Silicon Diffused Type Rectifier

Numéro de référence 1S1829
Description Silicon Diffused Type Rectifier
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





1 Page

No Preview Available !





1S1829 fiche technique
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
1S1829,1S1886
GENERAL PURPOSE RECTIFIER APPLICATIONS
1S1829,1S1886
Unit: mm
l Average Forward Current
l Repetitive Peak Reverse Voltage
l Plastic Mold Package
: IF (AV) = 1.0A (Ta = 65°C)
: VRRM = 200, 800V
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse
Voltage
1S1886
1S1829
Average Forward Current
(Ta = 60°C)
Peak One Cycle Surge
Forward Current
1S1829
1S1886
Junction Temperature
Storage Temperature Range
SYMBOL
VRRM
IF (AV)
IFSM
Tj
Tstg
RATINGS
200
800
1.0
45 (50Hz)
60 (50Hz)
40~150
40~150
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
UNIT
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.42g
DO15
SC39
33B1A
CHARACTERISTIC
Peak ForwardVoltage
Repetitive Peak Reverse
Current
Thermal Resistance
(Junction to Ambient)
SYMBOL
TEST CONDITION
VFM
IRRM (1)
IRRM (2)
Rth (ja)
IFM = 1.5A
VRRM = Rated
VRRM = Rated, Tj = 150°C
DC
MIN MAX UNIT
1.2 V
10
µA
400
100 °C / W
MARKING
1 2001-07-09

PagesPages 3
Télécharger [ 1S1829 ]


Fiche technique recommandé

No Description détaillée Fabricant
1S1829 Silicon Diffused Type Rectifier Toshiba Semiconductor
Toshiba Semiconductor
1S1829 AXIAL LEADED SILICON RECTIFIER DIODES SUNMATE
SUNMATE

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche