|
|
Numéro de référence | 1S1829 | ||
Description | Silicon Diffused Type Rectifier | ||
Fabricant | Toshiba Semiconductor | ||
Logo | |||
1 Page
TOSHIBA RECTIFIER SILICON DIFFUSED TYPE
1S1829,1S1886
GENERAL PURPOSE RECTIFIER APPLICATIONS
1S1829,1S1886
Unit: mm
l Average Forward Current
l Repetitive Peak Reverse Voltage
l Plastic Mold Package
: IF (AV) = 1.0A (Ta = 65°C)
: VRRM = 200, 800V
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse
Voltage
1S1886
1S1829
Average Forward Current
(Ta = 60°C)
Peak One Cycle Surge
Forward Current
1S1829
1S1886
Junction Temperature
Storage Temperature Range
SYMBOL
VRRM
IF (AV)
IFSM
Tj
Tstg
RATINGS
200
800
1.0
45 (50Hz)
60 (50Hz)
−40~150
−40~150
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
UNIT
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.42g
DO−15
SC−39
3−3B1A
CHARACTERISTIC
Peak ForwardVoltage
Repetitive Peak Reverse
Current
Thermal Resistance
(Junction to Ambient)
SYMBOL
TEST CONDITION
VFM
IRRM (1)
IRRM (2)
Rth (j−a)
IFM = 1.5A
VRRM = Rated
VRRM = Rated, Tj = 150°C
DC
MIN MAX UNIT
― 1.2 V
― 10
µA
― 400
― 100 °C / W
MARKING
1 2001-07-09
|
|||
Pages | Pages 3 | ||
Télécharger | [ 1S1829 ] |
No | Description détaillée | Fabricant |
1S1829 | Silicon Diffused Type Rectifier | Toshiba Semiconductor |
1S1829 | AXIAL LEADED SILICON RECTIFIER DIODES | SUNMATE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |