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Toshiba Semiconductor - Silicon Diffused Type Rectifier

Numéro de référence 1S1885A
Description Silicon Diffused Type Rectifier
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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1S1885A fiche technique
1S1885A,1S1887A,1S1888A
TOSHIBA Rectifiers Silicon Diffused Type
1S1885A,1S1887A,1S1888A
General Purpose Rectifier Applications
· Average Forward Current: IF (AV) = 1.2 A (Ta = 60°C)
· Repetitive Peak Reverse Voltage: VRRM = 100 V, 400 V, 600 V
· Peak One Cycle Surge Forward Current (non repetitive)
: IFSM = 100 A (50 Hz)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak
reverse voltage
1S1885A
1S1887A
1S1888A
Average forward current (Ta = 60°C)
Peak one cycle surge forward current
(non repetitive)
Junction temperature
Storage temperature range
Symbol
VRRM
IF (AV)
IFSM
Tj
Tstg
Rating
100
400
600
1.2
100 (50 Hz)
110 (60 Hz)
-40 to 150
-40 to 150
Unit
V
A
A
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Thermal resistance
(junction to ambient)
Symbol
VFM
IRRM
Rth (j-a)
Test Condition
IFM = 5 A
VRRM = Rated
DC
Marking
Type Code Lot No.
88A Month (starting from alphabet A)
Cathode Mark
Color: Silver
Year (last number of the christian era)
JEDEC
DO-15
JEITA
SC-39
TOSHIBA
3-3B1A
Weight: 0.42 g (typ.)
Min Typ. Max Unit
¾ ¾ 1.0 V
¾ ¾ 10 mA
¾ ¾ 100 °C /W
Code
85A
87A
88A
Type
1S1885A
1S1887A
1S1888A
1 2003-02-17

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