|
|
Numéro de référence | MBRD1045CT | ||
Description | 10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER | ||
Fabricant | Won-Top | ||
Logo | |||
1 Page
®
WON-TOP ELECTRONICS
MBRD1020CT – MBRD10100CT
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
Pb
Features
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
High Surge Current Capability
Low Power Loss, High Efficiency
Ideally Suited for Automatic Assembly
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Mechanical Data
Case: DPAK/TO-252, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.3 grams (approx.)
Mounting Position: Any
Marking: Device Code, See Page 3
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
A
B
D
C
J
E
G
PIN 1
PIN 3
PIN 1 2
3
K
PP
H
Case, PIN 2
L
DPAK/TO-252
Dim Min Max
A 6.05 6.65
B 5.05 5.55
C 2.25 2.40
D 1.05 1.25
E 5.48 6.08
G 2.55 3.00
H 0.55 0.90
J 0.49 0.55
K 0.95 1.25
L 0.49 0.55
P 2.30 Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
MBRD MBRD MBRD MBRD MBRD MBRD MBRD MBRD Unit
1020CT 1030CT 1040CT 1045CT 1050CT 1060CT 1080CT 10100CT
20 30 40 45 50 60 80 100 V
RMS Reverse Voltage
VR(RMS) 14 21 28 28 35 42 56 70
V
Average Rectified Output Current Total Device
@TC = 115°C
Per Diode
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on
Rated Load (JEDEC Method)
IO
IFSM
10
5.0
A
100 A
Forward Voltage per diode
@IF = 5.0A
VFM
0.55
0.75 0.85 V
Peak Reverse Current
At Rated DC Blocking Voltage
@TJ = 25°C
@TJ = 100°C
IRM
0.2
15
mA
Typical Junction Capacitance (Note 1)
CJ
500
380 pF
Thermal Resistance, Junction to Ambient (Note 2)
Thermal Resistance, Junction to Case (Note 2)
R JA
R JC
70
2.5
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
2. Mounted on FR-4 PC board with minimum recommended pad layout per diode.
© Won-Top Electronics Co., Ltd.
Revision: September, 2012
www.wontop.com
1
|
|||
Pages | Pages 4 | ||
Télécharger | [ MBRD1045CT ] |
No | Description détaillée | Fabricant |
MBRD1045CT | 10A SMD Schottky Barrier Rectifiers | TAITRON |
MBRD1045CT | 10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER | Won-Top |
MBRD1045CT | 10 Amp Schottky Rectifier | MCC |
MBRD1045CT | 10 Amps Schottky Rectifiers | JGD |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |