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Numéro de référence | MBRD10200CT | ||
Description | SCHOTTKY BARRIER RECTIFIER | ||
Fabricant | JCST | ||
Logo | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Diodes
MBRD10200CT SCHOTTKY BARRIER RECTIFIER
FEATURES
z Schottky Barrier Chip
z Guard Ring Die Construction for Transient Protection
z Low Power Loss,High Efficiency
z High Surge Capability
z High Current Capability and Low Forward Voltage Drop
z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
TO-25522-2L
1. ANODE
2. CATHODE
3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
VRWM
VR(RMS)
IO
IFSM
Peak repetitive reverse voltage
Working peak reverse voltage
RMS reverse voltage
Average rectified output current
Non-repetitive peak forward surge current
8.3ms half sine wave
PD
RΘJA
Tj
Tstg
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Value
200
140
10
125
1.25
80
125
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse voltage
V(BR)
IR=100μA
Reverse current
IR VR=200V
Forward voltage
VF(1)
VF(2)*
IF=5A
IF=10A
Typical total capacitance
Ctot VR=4V,f=1MHz
*Pulse test
Min
200
Typ Max
50
0.92
1.1
50
Unit
V
μA
V
V
pF
A-3,Mar,2014
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Pages | Pages 2 | ||
Télécharger | [ MBRD10200CT ] |
No | Description détaillée | Fabricant |
MBRD10200CT | 10A SMD Schottky Barrier Rectifiers | TAITRON |
MBRD10200CT | 10A SCHOTTKY BARRIER RECTIFIER | Diodes |
MBRD10200CT | Schottky Rectifier ( Diode ) | SANGDEST MICROELECTRONICS |
MBRD10200CT | SCHOTTKY BARRIER RECTIFIER | JCST |
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