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MBRD20150CT fiches techniques PDF

Sooner Power Semiconduction - High Power Schottky Barrier Rectifier

Numéro de référence MBRD20150CT
Description High Power Schottky Barrier Rectifier
Fabricant Sooner Power Semiconduction 
Logo Sooner Power Semiconduction 





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MBRD20150CT fiche technique
Sooner Power Semiconductor
MBRD20100CT THRU MBRD20200CT
High Power Schottky Barrier Rectifier
Package Outline Dimensions ( millimeters )
TO-252 (DPAK)
A Dim. Min. Max.
B A 6.35 6.73
B 5.21 5.46
C
N
C 4.32 ----
D2
D 0.89 1.27
O E 5.97 6.22
F 2.63 REF
I G 2.29 BSC
E
1
F
M
3
HJ
K
H 0.64 1.02
I 5.21 ----
J 1.15 1.52
P
K 0.71 1.14
Q L 0.64 0.88
L
G
R M 9.40 10.42
N 2.19 2.38
PIN 1
O 0.46 0.58
P 0.00 0.13
PIN 2
Q 1.39 1.65
PIN 3
R 0.508 BSC
All Dimensions in millimeter
Features
• High Current Capability
• Low Switching Noise
• High Surge Capability
• Low Power Loss & High Efficiency
• Guard Ring Protection
• Pd-free lead plating & Halogen-free part
Mechanical
• Molded Plastic Low profile TO-252 (DPAK)
• Plastic materials used carries underwriters
laboratory flammability classification 94V-0
• Lead Temperature for Soldering Purposes
265Max. for 10 Seconds
• Device Weight : Approximated 0.34 grams
Maximum Ratings & Electrical Characteristics ( TA = 25unless otherwise specified )
Parameter
Symbol
DC Blocking Voltage
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Average Rectified Output Current
(Total Device)
Non-Repetitive Peak Forward Surge Current (Per Leg)
(Surge applied at rated load conditions half wave, single phase, 60Hz)
Instantaneous Forward Voltage (Per Leg)
Instantaneous Reverse Current (Per Leg)
NOTE1.Test with 2inch Al board
REV. 00 - JUN-2015
IF = 10A , TA = 25
VR = VRRM , TA = 25
VR = VRRM , TA = 125
1
VRM
VRWM
VRRM
IO
IFSM
VF
IR
MBRD MBRD MBRD
20100CT 20150CT 20200CT
100 150 200
70 105 140
100 150 200
20
150
0.85 0.87
0.1
10
0.9
Units
Volts
Amps
Amps
Volts
mA

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